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Article Dans Une Revue New Journal of Physics Année : 2012

Diffusion at the Surface of Topological Insulators

Résumé

We consider the transport properties of topological insulators surface states in the presence of uncorrelated point-like disorder, both in the classical and quantum regimes. The transport properties of those two-dimensional surface states depend strongly on the amplitude of the hexagonal warping of their Fermi surface. It is shown that a perturbative analysis of the warping fails to describe the transport in experimentally available topological insulators, such as Bi2Se3 and Bi2Te3. Hence we develop a fully non-perturbative description of these effects. In particular, we find that the dependence of the warping amplitude on the Fermi energy manifests itself in a strong dependence of the diffusion constant on this Fermi energy, leading to several important experimental consequences. Moreover, the combination of a strong warping with an in plane Zeeman effect leads to an attenuation of conductance fluctuations in contrast to the situation of unwarped Dirac surface states.
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Dates et versions

hal-00758758 , version 1 (13-03-2018)

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Paternité - Pas d'utilisation commerciale - Pas de modification

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Pierre Adroguer, David Carpentier, Jérôme Cayssol, Edmond Orignac. Diffusion at the Surface of Topological Insulators. New Journal of Physics, 2012, 14 (10), pp.103027 (1-26). ⟨10.1088/1367-2630/14/10/103027⟩. ⟨hal-00758758⟩
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